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| AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT460 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOT460 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 60V ID = 85 A (VGS = 10V) RDS(ON) < 7.5m (VGS = 10V) UIS TESTED! TO-220 D Top View Drain Connected to Tab G D S G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 60 VGS Gate-Source Voltage 20 Continuous Drain TC=25C 85 CurrentG TC=100C 85 ID Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH B C Units V V A A mJ W C IDM IAR EAR PD TJ, TSTG 250 80 320 268 134 -55 to 175 TC=25C Power Dissipation TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B A Steady-State Steady-State Symbol RJA RJC Typ 45 0.45 Max 60 0.56 Units C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT460 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C 2 250 2.95 6.3 10.5 90 0.7 Min 60 10 50 100 4 7.5 13 1 85 4560 Typ Max Units V A nA V A m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC VDS=5V, ID=30A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3800 430 190 1.5 68 33 15 19 18 35 44 23 53 98 2.3 88 VGS=10V, VDS=30V, ID=30A VGS=10V, VDS=30V, RL=1, RGEN=3 IF=30A, dI/dt=100A/s IF=30A, dI/dt=100A/s 64 A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev0: Nov. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 10V 200 150 ID(A) 5V 100 50 4.5V 20 VGS=4V 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 7.2 7 RDS(ON) (m) 6.8 6.6 6.4 6.2 6 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 ID=30A 20 RDS(ON) (m) 10 1 125 10 25C 5 -40C 0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 0.01 0.001 -40C 25C IS (A) 15 0.1 125C 100 Normalized On-Resistance 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V, 30A 0 2 2.5 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics -40C 8V 80 100 VDS=5V ID (A) 60 40 125C 25C VGS=10V Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=30V ID=30A 8 Capacitance (nF) VGS (Volts) 4 6 Ciss 6 4 2 Crss Coss 2 0 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 RDS(ON) limited 100 ID (A) 10s Power (W) 500s 10 DC 1ms 5ms TJ(Max)=175C TC=25C 1 10 0 0 15 30 45 60 VDS (Volts) Figure 8: Capacitance Characteristics 10000 1000 1 100 100 0.0001 0.001 0.01 0.1 1 10 VDS (V) Figure 9: Maximun Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=0.45C/W 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.001 0.01 0.1 1 0.01 0.00001 Single Pulse 0.0001 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Current rating ID(A) 100 Power Dissipation (W) 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 12: Current De-rating (Note B) 150 TA=25C ID(A), Peak Avalanche Current 125 100 75 50 25 0 0.000001 TA=150C 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 10: Single Pulse Avalanche capability Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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